OPTOELECTRONIC DEVICES BASED ON THIN SINGLE-CRYSTALLINE SEMICONDUCTOR FILMS AND NON-EPITAXIAL OPTICAL CAVITIES

Description:

This is a novel nano scale optoelectronic device with ultrathin materials with single-crystalline quality providing a strong light-matter interaction with high photon absorption and quantum efficiency.

It uses conventional bulk semiconductor wafers, such as Si, Ge and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interactions. A high-yield and high-throughput method is used to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. These single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties such as the strong field effect and spectral selectivity.

Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency.

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Patent Information:
For Information, Contact:
Rupal Desai
Commercialization Manager
University at Buffalo
716-645-8140
rdesai@buffalo.edu
Inventors:
Qiaoqiang Gan (UB)
Haomin Song (UB)
Zhenqiang Ma (Non-Ub)
Zhenyang Xia (Non-Ub)
Zongfu Yu (non-UB) (WARF)
Ming Zhou (Non-Ub)
Keywords:
Technology
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