Polar Coding for Noisy Write-Once Memories (Cal Tech lead)

Description:

Write-once memory is a model for data-storage devices, where a set of binary cells are used to store data, and the cell levels can only increase when the data is rewritten. The WOM model was recently identified as a good model for flash memories, where rewriting delays expensive block erasures and by that leads to better preservation of cell quality and higher performance.

 

This technology is a coding scheme for WOM that incorporates error-correction capabilities to protect from noise in the process of writing data to the memory. The coding scheme is based on a nesting of non-linear polar codes.

 

Patent Information:
For Information, Contact:
Rupal Desai
Commercialization Manager
University at Buffalo
716-645-8140
rdesai@buffalo.edu
Inventors:
Michael Langberg (ub Inventor)
Eyal En Gad(non-UB)
Yue Li(non-UB)
Jehoshua Bruck (Non-Ub)
Joerg Kliewer (Non-Ub)
Anxiao Jiang
Keywords:
Technology
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