Quantization in Gate-All-Around Field Effect Transistors

Background:

The semiconductor industry constantly pushes innovation, demanding research and development into new materials, manufacturing processes, and designs. Silicon is the most widely used semiconductor material in the electronic industry, so market demands for high functioning and lower cost silicon-based computer ships are continuous.

Technology Overview:

Quantization of electron states in the channel of gate-all-around field-effect transistors (GAAFET) is shown to be practical through numerical simulations.  The key is to have sufficient barriers between the channel and the source/drain.  This technology offers a design to do so, enhancing silicon-based computer chips with improved performance of GAAFETs.

 Advantages:

• Performance Enhancement
• Energy Efficiency
• Cost Reduction
• Reliability and Durability

 Applications:

• Silicon-based semiconductor materials
• Gate-All-Around Field Effect Transistors

Intellectual Property Summary:

US Provisional Patent Application 63/724,380 filed on November 24, 2024. 

Stage of Development:

Conceptualization design and extensive simulation verification.

Licensing Status: 

Available for licensing or collaboration.