Site-Specific Synthesis of 2D TMDs for High-Performance Nanoelectronic Devices
A lithographically defined, transfer-free CVD process enables site-specific growth of MoS₂ directly on CMOS-compatible SiO₂/Si substrates using patterned MoO₃ as both precursor and high-k dielectric. The approach delivers tunable crystallinity, improved interface quality, and enhanced FET performance while eliminating post-growth transfer and etching...
Published: 3/9/2026
|
Inventor(s): Huamin Li, Fei Yao, Gabriel Lee, Keith Wong, Ajay Yadav, Chu-Te Chen, Anthony Cabanillas
Keywords(s): Materials & Chemicals, Semiconductor and Microprocessing, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Electronics, Technology Classifications > Nanotechnology, Technology Classifications > Materials and Chemicals
|