Overcoming Short Channel Barrier Effects of Field Effect Transistors
A design tool for overcoming short channel barrier effects of field effect transistors (FET).
Background:
The semiconductor industry constantly pushes innovation, demanding research and development into new materials, manufacturing processes, and designs. Silicon is the most widely used semiconductor material in the electronic industry, so there...
Published: 6/25/2025
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Inventor(s): Hong Luo, Piaohan Xu
Keywords(s): Computer, General Engineering, Instrumentation, Semiconductor and Microprocessing, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Computers, Technology Classifications > Engineering, Technology Classifications > Instrumentation
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Quantization in Gate-All-Around Field Effect Transistors
A design for quantization of electron states in the channel of gate-all-around field-effect transistors (GAAFET).
Background:
The semiconductor industry constantly pushes innovation, demanding research and development into new materials, manufacturing processes, and designs. Silicon is the most widely used semiconductor material in the electronic...
Published: 5/28/2025
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Inventor(s): Hong Luo, Piaohan Xu
Keywords(s): Featured, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Bioinformatics, Technology Classifications > Computers, Technology Classifications > Electronics, Technology Classifications > Energy, Technology Classifications > Instrumentation, Technology Classifications > Nanotechnology
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Delta-Sigma Modulator Enabled Variable-Input Resolution In-Memory Computing SRAM Macro
An SRAM based IMC with higher linearity than the state of the art using delta-sigma modulators.
Background:
SRAM based IMC has gained significant attention due to its high energy efficiency and easy integration with CMOS ICs. A fundamental limitation of SRAM based IMC is nonlinearity in the multiply-and-accumulate (MAC) operation. For large...
Published: 5/13/2025
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Inventor(s): Arindam Sanyal, Jae-sun Seo, Vasundhara Damodaran, Ziyu Liu
Keywords(s): Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Computers, Technology Classifications > Electronics, Technology Classifications > Energy Conservation
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Methods for Making Large-area, Free-standing Poly-crystalline Diamond Films
Low cost methods to produce poly-crystalline diamond (PCD) membranes with adjustable dimensions for use in electronic/mechanical/optoelectronic devices.
Background:
Due to its unique combination of outstanding physical and chemical properties, such as wide band-gap, chemical inertness, the highest hardness and thermal conductivity, negative electron...
Published: 5/13/2025
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Inventor(s): Jung-Hun Seo, Matthias Muehle, Dmitry Shinyavskiy
Keywords(s): Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Electronics, Technology Classifications > Computers
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Optimized Trusted Execution Environments for FPGAs with Enhanced Security
Systems and methods for creating a custom trusted execution environment (TEE) for FPGAs with isolated memory and cache in order to protect keys against side-channel attacks.
Background:
FPGAs are commonly used by high-security industries while being particularly vulnerable to side-channel attacks. Intel SGX and Arm TrustZone are two hardware TEE...
Published: 5/13/2025
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Inventor(s): Ziming Zhao, Md Armanuzzaman
Keywords(s): Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Electronics, Technology Classifications > Computers
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Methods for Multicast Key-Capacity
A means of protecting a multi-source multi-terminal noiseless network, with key-dissemination in which secret key K is multicasted from the network sources to its terminals.
Background:
A key-dissemination communication protocol is one in which a key K, which is at times secret, is shared among a collection of users as a prelude to future communication...
Published: 5/13/2025
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Inventor(s): Michael Langberg, Michelle Effros
Keywords(s): Featured, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Computers, Technology Classifications > Information Technology
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Dative Epitaxy - Growing Semiconductor Materials on vdW Templates
This is a distinct form of thin film epitaxy utilizing dative bonds used to grow semiconductor crystals with single unit cell thickness on a thin layer vdW template.
Background:
Two-dimensional (2D) semiconductors are the core force of next-generation electronics and optoelectronics, which are expected to exhibit quantum effect and greatly improve...
Published: 5/13/2025
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Inventor(s): Hao Zeng, Mengying Bian
Keywords(s): Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Materials and Chemicals, Technology Classifications > Computers
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Quantum Sensing Using Entangled Photons and Phonons
A quantum semiconductor design that opens up the possibility of realizing novel devices in which electron-phonon coupling is exploited to generate single phonons on-demand.
Background:
Hot carriers in semiconductor devices may lose energy efficiently through the emission of phonons. In 2D materials, the phonon energies (100-200 meV) can be well...
Published: 5/13/2025
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Inventor(s): Vasili Perebeinos, Jonathan Bird, Huamin Li
Keywords(s): Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Electronics, Technology Classifications > Computers, Technology Classifications > Sensors
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Communication Efficient Secret Sharing
Methods for distributed data storage that enable secret sharing.
A secret sharing scheme is a method for distributing a secret among several parties in such a way that only qualified subsets of the parties can reconstruct it and unqualified subsets receive no information about the secret. The key idea to reduce communication is to let the user...
Published: 5/13/2025
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Inventor(s): Michael Langberg, Wentao Huang, Joerg Kliewer, Jehoshua Bruck
Keywords(s): Technologies
Category(s): Technology Classifications > Information Technology, Technology Classifications > Computers, Campus > University at Buffalo
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Spin XOR Gate in Ferromagnet-Nonmagnet Heterostructures
A device capable of combining non-volatile memory with spin based-processing to dramatically increase processing speed and lower the power requirement of many CMOS logic gates.
Current data search devices rely on complementary metal-oxide semiconductor (CMOS) technology. Although CMOS has long been the gold standard, it is limited by the number...
Published: 5/13/2025
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Inventor(s): Igor Zutic, Roland Kawakami, Hanan Dery, Ilya Krivorotov, Lu Sham, Jing Shi, Hua Wen
Keywords(s): Technologies
Category(s): Technology Classifications > Computers, Campus > University at Buffalo
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